High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation

ABSTRACT

A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first or second conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one trench in the epitaxial layer. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material into a portion of the epitaxial layer adjacent to and beneath the bottom of the trench. The dopant is diffused to form a first doped layer in the epitaxial layer and the barrier material is removed from at least the bottom of the trench. The trench is etched through the first doped layer. A second doped layer is formed in the same manner as the first doped layer. The second doped layer is located vertically below the first doped layer. A filler material is deposited in the trench to substantially fill the trench. The dopant in the first and second doped layers are diffused to cause the first and second doped layers to overlap one another, thus completing the voltage sustaining region. Finally, at least one region of the second conductivity type is formed over the voltage sustaining region to define a junction therebetween.

RELATED APPLICATIONS

[0001] This application is related to copending U.S. patent applicationSer. No. 09/970,972 entitled “Method for Fabricating a PowerSemiconductor Device Having a Floating Island Voltage Sustaining Layer,”filed in the United States Patent and Trademark Office on Oct. 4, 2001.

[0002] This application is related to copending U.S. patent applicationSer. No. 10/039,068 entitled “Method For Fabricating A High VoltagePower MOSFET Having A Voltage Sustaining Region That Includes DopedColumns Formed By Rapid Diffusion,” filed in the United States Patentand Trademark Office on Dec. 31, 2001.

FIELD OF THE INVENTION

[0003] The present invention relates generally to semiconductor devices,and more particularly to power MOSFET devices.

BACKGROUND OF THE INVENTION

[0004] Power MOSFET devices are employed in applications such asautomobile electrical systems, power supplies, and power managementapplications. Such devices should sustain high voltage in the off-statewhile having a low voltage drop and high current flow in the on-state.

[0005]FIG. 1 illustrates a typical structure for an N-channel powerMOSFET. An N-epitaxial silicon layer 1 formed over an N+ siliconsubstrate 2 contains p-body regions 5 a and 6 a, and N+ source regions 7and 8 for two MOSFET cells in the device. P-body regions 5 and 6 mayalso include deep p-body regions 5 b and 6 b. A source-body electrode 12extends across certain surface portions of epitaxial layer 1 to contactthe source and body regions. The N-type drain for both cells is formedby the portion of N-epitaxial layer 1 extending to the uppersemiconductor surface in FIG. 1. A drain electrode is provided at thebottom of N+ substrate 2. An insulated gate electrode 18 typically ofpolysilicon lies primarily over the body and portions of the drain ofthe device, separated from the body and drain by a thin layer ofdielectric, often silicon dioxide. A channel is formed between thesource and drain at the surface of the body region when the appropriatepositive voltage is applied to the gate with respect to the source andbody electrode.

[0006] The on-resistance of the conventional MOSFET shown in FIG. 1 isdetermined largely by the drift zone resistance in epitaxial layer 1.The drift zone resistance is in turn determined by the doping and thelayer thickness of epitaxial layer 1. However, to increase the breakdownvoltage of the device, the doping concentration of epitaxial layer 1must be reduced while the layer thickness is increased. Curve 20 in FIG.2 shows the on-resistance per unit area as a function of the breakdownvoltage for a conventional MOSFET. Unfortunately, as curve 20 shows, theon-resistance of the device increases rapidly as its breakdown voltageincreases. This rapid increase in resistance presents a problem when theMOSFET is to be operated at higher voltages, particularly at voltagesgreater than a few hundred volts.

[0007]FIG. 3 shows a MOSFET that is designed to operate at highervoltages with a reduced on-resistance. This MOSFET is disclosed in paperNo. 26.2 in the Proceedings of the IEDM, 1998, p. 683. This MOSFET issimilar to the conventional MOSFET shown in FIG. 1 except that itincludes p-type doped regions 40 and 42 which extend from beneath thebody regions 5 and 6 into the drift region of the device. The p-typedoped regions 40 and 42 define columns in the drift region that areseparated by n-type doped columns, which are defined by the portions ofthe epitaxial layer 1 adjacent the p-doped regions 40 and 42. Thealternating columns of opposite doping type cause the reverse voltage tobe built up not only in the vertical direction, as in a conventionalMOSFET, but in the horizontal direction as well. As a result, thisdevice can achieve the same reverse voltage as in the conventionaldevice with a reduced layer thickness of epitaxial layer 1 and withincreased doping concentration in the drift zone. Curve 25 in FIG. 2shows the on-resistance per unit area as a function of the breakdownvoltage of the MOSFET shown in FIG. 3. Clearly, at higher operatingvoltages, the on-resistance of this device is substantially reducedrelative to the device shown in FIG. 1, essentially increasing linearlywith the breakdown voltage.

[0008] The improved operating characteristics of the device shown inFIG. 3 are

[0009] The improved operating characteristics of the device shown inFIG. 3 are based on charge compensation in the drift region of thetransistor. That is, the doping in the drift region is substantiallyincreased, e.g., by an order of magnitude or more, and the additionalcharge is counterbalanced by the addition of columns of opposite dopingtype. The blocking voltage of the transistor thus remains unaltered. Thecharge compensating columns do not contribute to the current conductionwhen the device is in its on state. These desirable properties of thetransistor depend critically on the degree of charge compensation thatis achieved between adjacent columns of opposite doping type.Unfortunately, nonuniformities in the dopant gradient of the columns canbe difficult to avoid as a result of limitations in the control ofprocess parameters during their fabrication. For example, diffusionacross the interface between the columns and the substrate and theinterface between the columns and the p-body region will give rise tochanges in the dopant concentration of the portions of the columns nearthose interfaces.

[0010] The structure shown in FIG. 3 can be fabricated with a processsequence that includes multiple epitaxial deposition steps, eachfollowed by the introduction of the appropriate dopant. Unfortunately,epitaxial deposition steps are expensive to perform and thus thisstructure is expensive to manufacture. Another technique for fabricatingthese devices is shown in copending U.S. application Ser. No.09/970,972, in which a trench is successively etched to differentdepths. A dopant material is implanted and diffused through the bottomof the trench after each etching step to form a series of doped regions(so-called “floating islands”) that collectively function like thep-type doped regions 40 and 42 seen in FIG. 3. However, theon-resistance of a device that uses the floating island technique is notas low as an identical device that uses continuous columns.

[0011] Accordingly, it would be desirable to provide a method offabricating the MOSFET structure shown in FIG. 3 that requires a minimumnumber of epitaxial deposition steps so that it can be produced lessexpensively while also allowing sufficient control of process parametersso that a high degree of charge compensation can be achieved in adjacentcolumns of opposite doping type in the drift region of the device.

SUMMARY OF THE INVENTION

[0012] In accordance with the present invention, a method is providedfor forming a power semiconductor device. The method begins by providinga substrate of a first conductivity type and then forming a voltagesustaining region on the substrate. The voltage sustaining region isformed by depositing an epitaxial layer of a first conductivity type onthe substrate and forming at least one trench in the epitaxial layer. Abarrier material is deposited along the walls of the trench. A dopant ofa second conductivity type is implanted through the barrier materialinto a portion of the epitaxial layer adjacent to and beneath the bottomof the trench. The dopant is diffused to form a first doped layer in theepitaxial layer and the barrier material is removed from at least thebottom of the trench. The trench is etched through the first dopedlayer. A second doped layer is formed in the same manner as the firstdoped layer. The second doped layer is located vertically below thefirst doped layer. A filler material is deposited in the trench tosubstantially fill the trench. The dopant in the first and second dopedlayers are diffused to cause the first and second doped layers tooverlap one another, thus completing the voltage sustaining region.Finally, at least one region of the second conductivity type is formedover the voltage sustaining region to define a junction therebetween.

[0013] The power semiconductor device formed by the inventive method maybe selected from the group consisting of a vertical DMOS, V-groove DMOS,and a trench DMOS MOSFET, an IGBT, a bipolar transistor, and a diode.

[0014] In accordance with another aspect of the invention, a powersemiconductor device is provided. The device includes a substrate of afirst conductivity type and a voltage sustaining region disposed on thesubstrate. The voltage sustaining region includes an epitaxial layerhaving a first conductivity type and at least one trench located in theepitaxial layer. At least one doped column having a dopant of a secondconductivity type is located in the epitaxial layer, adjacent a sidewallof the trench. The column is formed from a plurality of doped layersthat are arranged vertically one over the other and which are diffusedinto one another. A filler material is also provided, whichsubstantially fills the trench. At least one region of the secondconductivity is disposed over the voltage sustaining region to define ajunction therebetween.

BRIEF DESCRIPTION OF THE DRAWINGS

[0015]FIG. 1 shows a cross-sectional view of a conventional power MOSFETstructure.

[0016]FIG. 2 shows the on-resistance per unit area as a function of thebreakdown voltage for a conventional power MOSFET.

[0017]FIG. 3 shows a MOSFET structure that includes a voltage sustainingregion with columns of p-type dopant located below the body region,which is designed to operate with a lower on-resistance per unit area atthe same voltage than the structure depicted in FIG. 1.

[0018] FIGS. 4(a)-4(f) show a sequence of exemplary process steps thatmay be employed to fabricate a voltage sustaining region constructed inaccordance with the present invention.

DETAILED DESCRIPTION

[0019] In accordance with the present invention, a method of forming thep-type columns in the voltage sustaining layer of a semiconductor powerdevice may be generally described as follows. First, one or moretrenches are etched in the epitaxial layer that is to form the voltagesustaining region of the device. Each trench is centered where a dopedcolumn is to be located. A first doped section of the column is formedby implanting p-type dopant material into the bottom of the trench. Theimplanted material is diffused into the portion of the voltagesustaining region located immediately adjacent to and below the trenchbottom. The trenches are subsequently etched to a greater depth so thata second doped section of the column is formed by again implanting anddiffusing a p-type dopant material. The aforementioned process isrepeated until the desired number of vertically arranged segments ofeach column have been formed. The trenches are filled with a materialthat does not adversely affect the characteristics of the device.Exemplary materials that may be used for the material filling thetrenches include highly resistive polysilicon, a dielectric such assilicon dioxide, or other materials and combinations of materials.Finally, a thermal diffusion step is performed to cause adjacent dopedsection to overlap one another, thus forming a continous doped column ofthe type depicted in FIG. 3.

[0020] The power semiconductor device shown in FIG. 3 may be fabricatedin accordance with the following exemplary steps, which are illustratedin FIGS. 4(a)-4(f).

[0021] First, the N-type doped epitaxial layer 501 is grown on aconventionally N+ doped substrate 502. Epitaxial layer 501 is typically15-50 microns in thickness for a 400-800 V device with a resistivity of5-40 ohm-cm. Next, a dielectric masking layer is formed by covering thesurface of epitaxial layer 501 with a dielectric layer, which is thenconventionally exposed and patterned to leave a mask portion thatdefines the location of the trench 520. The trench 520 is dry etchedthrough the mask openings by reactive ion etching to an initial depththat may range, for example, from 5-15 microns. In general, the trenchdepth should be selected so that after the final diffusion step isperformed at the end of the fabrication process the different dopedsections will overlap adjacent doped sections. In general, the trenchdepths, dopant dose and the magnitude and duration of the diffusionprocess should be selected to achieve the desired charge compensation.

[0022] The sidewalls of each trench may be smoothed, if needed. First, adry chemical etch may be used to remove a thin layer of oxide (typicallyabout 500-1000 A) from the trench sidewalls to eliminate damage causedby the reactive ion etching process. Next, a sacrificial silicon dioxidelayer is grown over the trench 520. The sacrificial layer is removedeither by a buffer oxide etch or an HF etch so that the resulting trenchsidewalls are as smooth as possible.

[0023] In FIG. 4(b), a layer of silicon dioxide 524 is grown in trench520. The thickness of the silicon dioxide layer 524 should be sufficientto prevent implanted atoms from penetrating the silicon adjacent to andbelow the sidewalls of the trench 520, while allowing the implantedatoms to penetrate the oxide layer 524 at the bottom of the trench 520so that they can be deposited into the silicon adjacent and beneath thetrench bottom. Next, a dopant 528 such as boron is implanted through theoxide layer at the bottom of the trench 520. The total dose of dopantand the implant energy should be chosen such that the amount of dopantleft in the epitaxial layer 501 after the subsequent diffusion andetching steps are performed satisfies the breakdown requirements of theresulting device. Next, in FIG. 4(c), a high temperature diffusion stepis performed to “drive-in” the implanted dopant 528 both vertically andlaterally. Oxide layer 524 is removed from the bottom of the trench 520.The oxide layer 524 may or may not be removed from the sidewalls of thetrench 520.

[0024] In FIG. 4(d), the depth of the trench 520 is increased by anamount no greater than that which will allow the subsequently formeddoped sections to overlap one another after the final diffusion step isperformed at the end of the fabrication process. Next, a second dopedsegment of the column is fabricated by repeating the steps of growing anoxide layer on the trench walls, implanting and diffusing dopant throughthe bottom of the trench, and removing the oxide layer from the bottomof the trench. This process can be repeated as many times as necessaryto form the appropriate number of doped segments to provide the desiredbreakdown voltage. For example, in FIG. 4(d), four such doped segments528, 530, 532, and 534 are shown. As seen in FIG. 4d(i), the trenchetching process is complete prior to the formation of the final dopedsegment 534. Alternatively, as seen in FIG. 4d(ii), after the finaldoped segment 534 is formed, the trench may undergo another etch step toetch through the final doped segment 534, ensuring that the proper totalcharge dosage and overlap of the doped segments is achieved.

[0025] Finally, the trench 520 is filled with a material that does notadversely affect the characteristics of the device. Exemplary materialsinclude, but are not limited to, thermally grown silicon dioxide, adeposited dielectric such as silicon dioxide, silicon nitride, or acombination of thermally grown and deposited layers of these or othermaterials, high resistivity single crystal silicon, high resistivitypolysilicon, or a sandwich of thermal oxide, a deposited dielectric andhigh resistivity polysilicon. The trench may also be filled withsedimented glass, either by itself in combination with any one or moreof the aforementioned materials. If high resistivity polysilicon isemployed, it may be converted to single crystal silicon using arecrystallization procedure such as a high temperature anneal step.

[0026] Finally, as shown in FIGS. 4f(i) and 4 f(ii), after planarizingthe surface of the structure, the structure undergoes a high temperaturediffusion step to cause the doped segments to overlap so that acontinuous doped column 540 is formed.

[0027] The aforementioned sequence of processing steps resulting in thestructures depicted in FIG. 4f(i) and 4 f(ii) provides a voltagesustaining layer with p-type doped columns on which any of a number ofdifferent power semiconductor devices can be fabricated. As previouslymentioned, such power semiconductor devices include vertical DMOS,V-groove DMOS, and trench DMOS MOSFETs, IGBTs and other MOS-gateddevices. For instance, FIG. 3 shows an example of a MOSFET that includesa voltage sustaining layer with doped columns constructed in accordancewith the principles of the present invention. It should be noted thatwhile FIG. 4 shows a single trench that is used to form the dopedcolumn, the present invention encompasses a voltage sustaining regionshaving single or multiple trenches to form any number of doped columns.For example, a doped column or columns may be located below the centerof the gate or in other locations when appropriate to decrease theon-resistance of the device.

[0028] Once the voltage sustaining region and the doped column orcolumns have been formed as shown in FIG. 4, the MOSFET shown in FIG. 3can be completed in the following manner. The gate oxide is grown afteran active region mask is formed. Next, a layer of polycrystallinesilicon is deposited, doped, and oxidized. The polysilcon layer is thenmasked to form the gate regions. The p+ doped deep body regions 5 b and6 b are formed using conventional masking, implantation and diffusionsteps. For example, the p+-doped deep body regions are boron implantedat 20 to 200 KeV with a dosage from about 1×10¹⁴ to 5×10¹⁵/cm². Theshallow body regions 5 a and 6 a are formed in a similar fashion. Theimplant dose for this region will be 1×10¹³ to 5×10¹⁴/cm² at an energyof 20 to 100 KeV.

[0029] Next, a photoresist masking process is used to form a patternedmasking layer that defines source regions 7 and 8. Source regions 7 and8 are then formed by an implantation and diffusion process. For example,the source regions may be implanted with arsenic at 20 to 100 KeV to aconcentration that is typically in the range of 2×10¹⁵ to 1.2×10¹⁶/cm².After implantation, the arsenic is diffused to a depth of approximately0.5 to 2.0 microns. The depth of the body region typically ranges fromabout 1-3 microns, with the P+ doped deep body region (if present) beingslightly deeper. The DMOS transistor is completed in a conventionalmanner by etching the oxide layer to form contact openings on the frontsurface. A metallization layer is also deposited and masked to definethe source-body and gate electrodes. Also, a pad mask is used to definepad contacts. Finally, a drain contact layer is formed on the bottomsurface of the substrate.

[0030] It should be noted that while a specific process sequence forfabricating the power MOSFET is disclosed, other process sequences maybe used while remaining within the scope of this invention. Forinstance, the deep p+ doped body region may be formed before the gateregion is defined. It is also possible to form the deep p+ doped bodyregion prior to forming the trenches. In some DMOS structures, the P+doped deep body region may be shallower than the P-doped body region, orin some cases, there may not even be a P+ doped body region.

[0031] Although various embodiments are specifically illustrated anddescribed herein, it will be appreciated that modifications andvariations of the present invention are covered by the above teachingsand are within the purview of the appended claims without departing fromthe spirit and intended scope of the invention. For example, a powersemiconductor device in accordance with the present invention may beprovided in which the conductivities of the various semiconductorregions are reversed from those described herein. Moreover, while avertical DMOS transistor has been used to illustrate exemplary stepsrequired to fabricate a device in accordance with the present invention,other DMOS FETs and other power semiconductor devices such as diodes,bipolar transistors, power JFETs, IGBTs, MCTs, and other MOS-gated powerdevices may also be fabricated following these teachings.

What is claimed is:
 1. A method of forming a power semiconductor devicecomprising the steps of: A. providing a substrate of a first or secondconductivity type; B. forming a voltage sustaining region on saidsubstrate by:
 1. depositing an epitaxial layer on the substrate, saidepitaxial layer having a first conductivity type;
 2. forming at leastone trench in said epitaxial layer;
 3. depositing a barrier materialalong the walls of said trench;
 4. implanting a dopant of a secondconductivity type through the barrier material into a portion of theepitaxial layer adjacent to and beneath the bottom of said trench; 5.diffusing said dopant to form a first doped layer in said epitaxiallayer;
 6. removing the barrier material from at least the bottom of thetrench;
 7. etching the trench through said first doped layer andrepeating steps (B.3)-(B.6) to form a second doped layer verticallybelow said first doped layer;
 8. depositing a filler material in saidtrench to substantially fill said trench;
 9. diffusing said dopant inthe first and second doped layers to cause the first and second dopedlayers to overlap one another; and C. forming over said voltagesustaining region at least one region of said second conductivity typeto define a junction therebetween.
 2. The method of claim 1 furthercomprising the step of etching the trench through said second dopedlayer.
 3. The method of claim 1 wherein step (C) further includes thesteps of: forming a gate conductor above a gate dielectric region;forming first and second body regions in the epitaxial layer to define adrift region therebetween, said body regions having a secondconductivity type; forming first and second source regions of the firstconductivity type in the first and second body regions, respectively. 4.The method of claim 1 wherein said barrier material is an oxidematerial.
 5. The method of claim 4 wherein said oxide material issilicon dioxide.
 6. The method of claim 1 wherein said material fillingthe trench is high resistivity polysilicon.
 7. The method of claim 1wherein said material filling the trench is a dielectric material. 8.The method of claim 7 wherein said dielectric material is silicondioxide.
 9. The method of claim 7 wherein said dielectric material issilicon nitride.
 10. The method of claim 1 wherein said dopant is boron.11. The method of claim 3 wherein said body regions include deep bodyregions.
 12. The method of claim 1, wherein said trench is formed byproviding a masking layer defining at least one trench, and etching thetrench defined by the masking layer.
 13. The method of claim 3, whereinsaid body region is formed by implanting and diffusing a dopant into thesubstrate.
 14. The method of claim 1 wherein said power semiconductordevice is selected from the group consisting of a vertical DMOS,V-groove DMOS, and a trench DMOS MOSFET, an IGBT, and a bipolartransistor.
 15. A power semiconductor device made in accordance with themethod of claim
 1. 16. A power semiconductor device made in accordancewith the method of claim
 6. 17. A power semiconductor device made inaccordance with the method of claim
 14. 18. A power semiconductor devicecomprising: a substrate of a first or second conductivity type; avoltage sustaining region disposed on said substrate, said voltagesustaining region including: an epitaxial layer having a firstconductivity type; at least one trench located in said epitaxial layer;at least one doped column having a dopant of a second conductivity type,said column being formed from a plurality of doped layers diffused intoone another, said doped layers being located in said epitaxial layeradjacent a sidewall of said trench and arranged vertically one over theother; a filler material substantially filling said trench; and at leastone region of said second conductivity disposed over said voltagesustaining region to define a junction therebetween.
 19. The device ofclaim 18 wherein said at least one region further includes: a gatedielectric and a gate conductor disposed above said gate dielectric;first and second body regions located in the epitaxial layer to define adrift region therebetween, said body regions having a secondconductivity type; and first and second source regions of the firstconductivity type located in the first and second body regions,respectively.
 20. The device of claim 18 wherein said material fillingthe trench is high resistivity polysilicon.
 21. The device of claim 18wherein said material filling the trench is a dielectric material. 22.The device of claim 21 wherein said dielectric material is silicondioxide.
 23. The device of claim 21 wherein said dielectric material issilicon nitride.
 24. The device of claim 18 wherein said dopant isboron.
 25. The device of claim 20 wherein said body regions include deepbody regions.
 26. The device of claim 18 wherein said trench has acircular cross-section.
 27. The device of claim 18 wherein said trenchhas a cross-sectional shape selected from the group consisting of asquare, rectangle, octagon and a hexagon.